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SiHW47N60EF-GE3

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The SiHW47N60EF-GE3 from Vishay is a MOSFET with Continous Drain Current 47 A, Drain Source Resistance 56 to 65 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for SiHW47N60EF-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiHW47N60EF-GE3
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, 152 to 228 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    47 A
  • Drain Source Resistance
    56 to 65 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    152 to 228 nC
  • Power Dissipation
    379 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247AD
  • Applications
    Telecommunication - Server and telecom power supplies, Lighting - High-intensity lighting (HID) - Light emitting diodes (LEDs), Consumer and computing - ATX power supplies, Industrial - Welding - Battery chargers, Renewable energy - Solar (PV inverters)

Technical Documents
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