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FTK0959D

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The FTK0959D from First Silicon is a MOSFET with Continous Drain Current -19 to -30 A, Drain Source Resistance 36 to 55 milli-ohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.2 to -2.5 V. Tags: Surface Mount. More details for FTK0959D can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK0959D
  • Manufacturer
    First Silicon
  • Description
    -100 V, -19 to -30 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -19 to -30 A
  • Drain Source Resistance
    36 to 55 milli-ohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.2 to -2.5 V
  • Gate Charge
    98 to 150 nC
  • Switching Speed
    24 to 450 ns
  • Power Dissipation
    102 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Networking, Load Switch, LED applications
  • Note
    Input Capacitance :- 9000 pF
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