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FTK0980F

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The FTK0980F from First Silicon is a MOSFET with Continous Drain Current 100 to 150 A, Drain Source Resistance 3.5 to 6.0 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -12 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Through Hole. More details for FTK0980F can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK0980F
  • Manufacturer
    First Silicon
  • Description
    100 V, 100 to 150 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 to 150 A
  • Drain Source Resistance
    3.5 to 6.0 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -12 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    110 to 165 nC
  • Switching Speed
    23 to 320 ns
  • Power Dissipation
    275 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    Networking, Load Switch, LED applications, Quick Charger
  • Note
    Input Capacitance :- 13300 pF
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