1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. First Silicon
  6. FTK10N10

FTK10N10

Request Quote

Note : Your request will be directed to First Silicon.

The FTK10N10 from First Silicon is a MOSFET with Continous Drain Current 9.6 A, Drain Source Resistance 0.14 ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for FTK10N10 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FTK10N10
  • Manufacturer
    First Silicon
  • Description
    100 V, 9.6 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9.6 A
  • Drain Source Resistance
    0.14 ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    15.5 nC
  • Switching Speed
    7.4 to 11 ns
  • Power Dissipation
    30 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Power switching application
  • Note
    Input Capacitance :- 690 pF
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products