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FTK2120NPSOT563

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The FTK2120NPSOT563 from First Silicon is a MOSFET with Continous Drain Current 800 mA, Drain Source Resistance 200 to 1500 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.3 to 1 V. Tags: Surface Mount. More details for FTK2120NPSOT563 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK2120NPSOT563
  • Manufacturer
    First Silicon
  • Description
    20 V, 800 mA, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    800 mA
  • Drain Source Resistance
    200 to 1500 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.3 to 1 V
  • Gate Charge
    1 to 2 nC
  • Switching Speed
    3.5 to 28 ns
  • Power Dissipation
    312 mW
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-563
  • Applications
    Notebook, Load Switch, Networking, Hand-held Instruments
  • Note
    Input Capacitance :- 75 pF
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