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FTK2210DFN22

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The FTK2210DFN22 from First Silicon is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 3.6 to 5.6 milli-ohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for FTK2210DFN22 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK2210DFN22
  • Manufacturer
    First Silicon
  • Description
    12 V, 12 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    3.6 to 5.6 milli-ohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    31.8 to 41.3 nC
  • Switching Speed
    13 to 110 ns
  • Power Dissipation
    1.32 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN22
  • Applications
    Battery Management Application, Power Management Functions.
  • Note
    Input Capacitance :- 3601 pF
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