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SSM3K376R

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SSM3K376R Image

The SSM3K376R from Toshiba is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 45 to 109 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -8 to 12 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for SSM3K376R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM3K376R
  • Manufacturer
    Toshiba
  • Description
    30 V, 2.2 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    45 to 109 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -8 to 12 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    2.2 nC
  • Power Dissipation
    2 W
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Power Management Switches, DC-DC Converters

Technical Documents
View details on the manufacturer's website
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