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FTK2210VNN

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The FTK2210VNN from First Silicon is a MOSFET with Continous Drain Current 30 A, Drain Source Resistance 8 to 20 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.3 to 1 V. Tags: Surface Mount. More details for FTK2210VNN can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK2210VNN
  • Manufacturer
    First Silicon
  • Description
    20 V, 30 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    30 A
  • Drain Source Resistance
    8 to 20 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.3 to 1 V
  • Gate Charge
    16.9 to 26 nC
  • Switching Speed
    6.8 to 79 ns
  • Power Dissipation
    26 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN33
  • Applications
    MB / VGA / Vcore, POL Applications, SMPS 2nd SR, Li-Battery Protection
  • Note
    Input Capacitance :- 1480 pF
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