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2SJ649

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The 2SJ649 from Renesas is a MOSFET with Continous Drain Current -20 to 20 A, Drain Source Resistance 38 to 75 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Charge 38 nC. Tags: Through Hole. More details for 2SJ649 can be seen below.

Product Specifications

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Product Details

  • Part Number
    2SJ649
  • Manufacturer
    Renesas
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -20 to 20 A
  • Drain Source Resistance
    38 to 75 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Charge
    38 nC
  • Power Dissipation
    25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220

Technical Documents
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