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FTK2301E

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The FTK2301E from First Silicon is a MOSFET with Continous Drain Current -2.8 A, Drain Source Resistance 90 to 156 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.4 to 0.9 V. Tags: Surface Mount. More details for FTK2301E can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK2301E
  • Manufacturer
    First Silicon
  • Description
    -20 V, -2.8 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.8 A
  • Drain Source Resistance
    90 to 156 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.4 to 0.9 V
  • Switching Speed
    830 to 5500 ns
  • Power Dissipation
    0.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Simple drive requirement
  • Note
    Input Capacitance :- 520 pF
View details on the manufacturer's website
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