1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. SSM3H137TU

SSM3H137TU

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

SSM3H137TU Image

The SSM3H137TU from Toshiba is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 200 to 295 Milliohm, Drain Source Breakdown Voltage 34 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.7 to 1.7 V. Tags: Surface Mount. More details for SSM3H137TU can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SSM3H137TU
  • Manufacturer
    Toshiba
  • Description
    34 V, 3 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    200 to 295 Milliohm
  • Drain Source Breakdown Voltage
    34 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.7 to 1.7 V
  • Gate Charge
    3 nC
  • Power Dissipation
    1 W
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UFM
  • Applications
    Relay Drivers

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products