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FTK2516DFN23

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The FTK2516DFN23 from First Silicon is a MOSFET with Continous Drain Current 8.8 to 11 A, Drain Source Resistance 4.5 to 11 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.5 V. Tags: Surface Mount. More details for FTK2516DFN23 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK2516DFN23
  • Manufacturer
    First Silicon
  • Description
    20 V, 8.8 to 11 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    8.8 to 11 A
  • Drain Source Resistance
    4.5 to 11 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.5 V
  • Gate Charge
    15 to 30 nC
  • Switching Speed
    28 to 128 ns
  • Power Dissipation
    1.56 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN23
  • Applications
    Handheld Instruments, POL Applications, Battery Protection Applications
  • Note
    Input Capacitance :- 2500 pF
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