1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. First Silicon
  6. FTK2A18NS

FTK2A18NS

Request Quote

Note : Your request will be directed to First Silicon.

The FTK2A18NS from First Silicon is a MOSFET with Continous Drain Current 0.9 to 1.1 A, Drain Source Resistance 950 to 1300 milli-ohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for FTK2A18NS can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FTK2A18NS
  • Manufacturer
    First Silicon
  • Description
    200 V, 0.9 to 1.1 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.9 to 1.1 A
  • Drain Source Resistance
    950 to 1300 milli-ohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    5.3 to 7.5 nC
  • Switching Speed
    6 to 24 ns
  • Power Dissipation
    3.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223
  • Applications
    Power Management in TV Inverter
  • Note
    Input Capacitance :- 325 pF
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products