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FTK3134KDFN1006

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The FTK3134KDFN1006 from First Silicon is a MOSFET with Continous Drain Current 0.75 A, Drain Source Resistance 250 to 900 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.35 to 1.1 V. Tags: Surface Mount. More details for FTK3134KDFN1006 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK3134KDFN1006
  • Manufacturer
    First Silicon
  • Description
    20 V, 0.75 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.75 A
  • Drain Source Resistance
    250 to 900 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.35 to 1.1 V
  • Switching Speed
    4.8 to 17.3 ns
  • Power Dissipation
    100 mW
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN1006-3L
  • Applications
    Load/Power Switching, Interfacing Switching, Battery Management for Ultra Small Portable Electronics, Logic Level Shift
  • Note
    Input Capacitance :- 120 pF
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