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FTK3218DFN22

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The FTK3218DFN22 from First Silicon is a MOSFET with Continous Drain Current 8.2 A, Drain Source Resistance 14.6 to 90 milli-ohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 V. Tags: Surface Mount. More details for FTK3218DFN22 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK3218DFN22
  • Manufacturer
    First Silicon
  • Description
    -12 V, 8.2 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8.2 A
  • Drain Source Resistance
    14.6 to 90 milli-ohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 V
  • Gate Charge
    28 nC
  • Switching Speed
    8.6 to 150 ns
  • Power Dissipation
    1.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN22
  • Applications
    Battery Switch, High Side Load Switch
  • Note
    Input Capacitance :- 2240 pF
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