SSM3J117TU

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SSM3J117TU Image

The SSM3J117TU from Toshiba is a MOSFET with Continous Drain Current -2 A, Drain Source Resistance 80 to 225 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.6 to -1.2 V. Tags: Surface Mount. More details for SSM3J117TU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM3J117TU
  • Manufacturer
    Toshiba
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2 A
  • Drain Source Resistance
    80 to 225 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.6 to -1.2 V
  • Power Dissipation
    0.8 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UFM
  • Applications
    DC-DC converter Applications, High-Speed Switching Applications

Technical Documents

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