FTK3443S

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The FTK3443S from First Silicon is a MOSFET with Continous Drain Current -4.7 A, Drain Source Resistance 22 to 70 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.6 to -1.4 V. Tags: Surface Mount. More details for FTK3443S can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK3443S
  • Manufacturer
    First Silicon
  • Description
    -20 V, -4.7 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.7 A
  • Drain Source Resistance
    22 to 70 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.6 to -1.4 V
  • Switching Speed
    22 to 70 ns
  • Power Dissipation
    1.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-LC
  • Applications
    Advanced trench process technology, High density cell design for ultra low on-resistance

Technical Documents

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