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FTK3520NN

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The FTK3520NN from First Silicon is a MOSFET with Continous Drain Current 640 to 800 mA, Drain Source Resistance 370 to 650 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.2 V. Tags: Surface Mount. More details for FTK3520NN can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK3520NN
  • Manufacturer
    First Silicon
  • Description
    30 V, 640 to 800 mA, N-Channel Enhancement Mode

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    640 to 800 mA
  • Drain Source Resistance
    370 to 650 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.2 V
  • Gate Charge
    2.6 to 5.2 nC
  • Switching Speed
    4 to 29 ns
  • Power Dissipation
    275 mW
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Applications
    Notebook, Load Switch, Networking, Hand-held Instruments
  • Note
    Input Capacitance :- 146 pF
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