FTK3959DFN56

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The FTK3959DFN56 from First Silicon is a MOSFET with Continous Drain Current -56 to -90 A, Drain Source Resistance 3.5 to 7.0 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.2 to -2.2 V. Tags: Surface Mount. More details for FTK3959DFN56 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK3959DFN56
  • Manufacturer
    First Silicon
  • Description
    -30 V, 136 W, P-Channel Enhancement Mode, MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -56 to -90 A
  • Drain Source Resistance
    3.5 to 7.0 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.2 to -2.2 V
  • Gate Charge
    108 to 150 nC
  • Switching Speed
    28 to 340 ns
  • Power Dissipation
    136 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN56
  • Applications
    Motor Driver Applications, POL Applications, Load Switch, LED Application
  • Note
    Input Capacitance :- 9000 pF

Technical Documents

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