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IQIA56N60B3

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The IQIA56N60B3 from iQXPRZ Power is a MOSFET with Continous Drain Current 35 to 56 A, Drain Source Resistance 0.045 to 0.12 ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Surface Mount. More details for IQIA56N60B3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IQIA56N60B3
  • Manufacturer
    iQXPRZ Power
  • Description
    600 V, 35 to 56 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    35 to 56 A
  • Drain Source Resistance
    0.045 to 0.12 ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    120 nC
  • Switching Speed
    7 to 78 ns
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT227
  • Applications
    Consumer SMPS, Telecom power supplies, PC silver box, Server power supplies, Solar inverter, Welding inverter, Induction heating, Electronic ballast
  • Note
    Input Capacitance :- 5600 pF

Technical Documents
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