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FTK4001E

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The FTK4001E from First Silicon is a MOSFET with Continous Drain Current 238 mA, Drain Source Resistance 1.5 to 3.5 ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.5 to 1.5 V. Tags: Surface Mount. More details for FTK4001E can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK4001E
  • Manufacturer
    First Silicon
  • Description
    20 V, 238 mA, N-Channel Enhancement Mode

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    238 mA
  • Drain Source Resistance
    1.5 to 3.5 ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.5 to 1.5 V
  • Switching Speed
    13 to 98 ns
  • Power Dissipation
    300 mW
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-523
  • Applications
    Power Management Load Switch, Level Shift, Portable application such as cell phones, media players, Digital cameras, PDA's, Video games, Hand held computers
  • Note
    Input Capacitance :- 20 pF
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