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FTK4435

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The FTK4435 from First Silicon is a MOSFET with Continous Drain Current -9.1 A, Drain Source Resistance 24.0 to 35 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1 to -3 V. Tags: Surface Mount. More details for FTK4435 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK4435
  • Manufacturer
    First Silicon
  • Description
    -30 V, -9.1 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -9.1 A
  • Drain Source Resistance
    24.0 to 35 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1 to -3 V
  • Gate Charge
    25 to 50 nC
  • Switching Speed
    15 to 70 ns
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Applications
    Battery protection, Load switch, Power management
  • Note
    Input Capacitance :- 1350 pF

Technical Documents
View details on the manufacturer's website
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