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RJK5002DPD

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The RJK5002DPD from Renesas is a MOSFET with Continous Drain Current 2.4 A, Drain Source Resistance 3830 to 5000 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Charge 6.7 nC. Tags: Surface Mount. More details for RJK5002DPD can be seen below.

Product Specifications

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Product Details

  • Part Number
    RJK5002DPD
  • Manufacturer
    Renesas
  • Description
    500 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.4 A
  • Drain Source Resistance
    3830 to 5000 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Charge
    6.7 nC
  • Power Dissipation
    30 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    MP-3A
  • Applications
    High Speed Power Switching

Technical Documents
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