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FTK4903DFN56

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The FTK4903DFN56 from First Silicon is a MOSFET with Continous Drain Current -38 to -60 A, Drain Source Resistance 10.8 to 20.5 milli-ohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.2 to -2.5 V. Tags: Surface Mount. More details for FTK4903DFN56 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK4903DFN56
  • Manufacturer
    First Silicon
  • Description
    -40 V, -38 to -60 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -38 to -60 A
  • Drain Source Resistance
    10.8 to 20.5 milli-ohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.2 to -2.5 V
  • Gate Charge
    41 to 65 nC
  • Switching Speed
    10 to 40 ns
  • Power Dissipation
    97 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN56
  • Applications
    Motor Drive, Power Tools, LED Lighting
  • Note
    Input Capacitance :- 4130 pF

Technical Documents
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