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PRM2R8N06N5

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The PRM2R8N06N5 from PFC Device is a MOSFET with Continous Drain Current 45 to 150 A, Drain Source Resistance 2.8 to 5.4 milli-ohm, Drain Source Breakdown Voltage 65 V, Gate Source Voltage -12 to 20 V, Gate Source Threshold Voltage 1.0 to 2.5 V. Tags: Surface Mount. More details for PRM2R8N06N5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    PRM2R8N06N5
  • Manufacturer
    PFC Device
  • Description
    65 V, 45 to 150 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    45 to 150 A
  • Drain Source Resistance
    2.8 to 5.4 milli-ohm
  • Drain Source Breakdown Voltage
    65 V
  • Gate Source Voltage
    -12 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.5 V
  • Gate Charge
    97 nC
  • Switching Speed
    25 to 155 ns
  • Power Dissipation
    104 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN-5x6
  • Applications
    Charger Adapter, Power Tools, LED Lighting
  • Note
    Input Capacitance :- 5200 pF

Technical Documents
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