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FTK8966D

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The FTK8966D from First Silicon is a MOSFET with Continous Drain Current 38 to 60 A, Drain Source Resistance 9.8 to 12 milli-ohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FTK8966D can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK8966D
  • Manufacturer
    First Silicon
  • Description
    -25 to 25 V, 38 to 60 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    38 to 60 A
  • Drain Source Resistance
    9.8 to 12 milli-ohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    31.2 to 48 nC
  • Switching Speed
    16 to 80 ns
  • Power Dissipation
    102 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Networking, Load Switch, LED applications
  • Note
    Input Capacitance :- 2700 pF
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