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IRF3710

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The IRF3710 from First Silicon is a MOSFET with Continous Drain Current 42 to 59 A, Drain Source Resistance 14 to 18 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for IRF3710 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF3710
  • Manufacturer
    First Silicon
  • Description
    -20 to 20 V, 42 to 59 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    42 to 59 A
  • Drain Source Resistance
    14 to 18 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Switching Speed
    17 to 77 ns
  • Power Dissipation
    160 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 2900 pF
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