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WMK028N10HG2

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The WMK028N10HG2 from First Silicon is a MOSFET with Continous Drain Current 170 to 245 A, Drain Source Resistance 2.4 to 2.8 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for WMK028N10HG2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    WMK028N10HG2
  • Manufacturer
    First Silicon
  • Description
    -20 to 20 V, 170 to 245 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    170 to 245 A
  • Drain Source Resistance
    2.4 to 2.8 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    98 nC
  • Switching Speed
    25 to 50 ns
  • Power Dissipation
    278 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Hard Switching and High Speed Circuit, DC/DC Converters, Synchronous Rectification in SMPS
  • Note
    Input Capacitance :- 7735 pF
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