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2N5003DW

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The 2N5003DW from GALAXY CENTURY MICROELECTRONICS is a MOSFET with Continous Drain Current 0.3 A, Drain Source Resistance 1100 to 4000 milli-ohm, Drain Source Breakdown Voltage 50 V, Gate Source Voltage ±20 V, Gate Source Threshold Voltage 0.5 to 1 V. Tags: Surface Mount. More details for 2N5003DW can be seen below.

Product Specifications

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Product Details

  • Part Number
    2N5003DW
  • Manufacturer
    GALAXY CENTURY MICROELECTRONICS
  • Description
    ±20 V, 0.3 A Dual N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.3 A
  • Drain Source Resistance
    1100 to 4000 milli-ohm
  • Drain Source Breakdown Voltage
    50 V
  • Gate Source Voltage
    ±20 V
  • Gate Source Threshold Voltage
    0.5 to 1 V
  • Gate Charge
    4.3 nC
  • Power Dissipation
    0.31 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Military, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Applications
    N-channel enhancement mode effect transistor, Switching application

Technical Documents
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