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BL1012V

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The BL1012V from GALAXY CENTURY MICROELECTRONICS is a MOSFET with Continous Drain Current 0.75 A, Drain Source Resistance 250 to 800 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage ±12 V, Gate Source Threshold Voltage 0.35 to 1.1 V. Tags: Surface Mount. More details for BL1012V can be seen below.

Product Specifications

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Product Details

  • Part Number
    BL1012V
  • Manufacturer
    GALAXY CENTURY MICROELECTRONICS
  • Description
    ±12 V, 0.75 A Dual N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.75 A
  • Drain Source Resistance
    250 to 800 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    ±12 V
  • Gate Source Threshold Voltage
    0.35 to 1.1 V
  • Gate Charge
    1.4 nC
  • Power Dissipation
    0.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Military, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-563
  • Applications
    Load/Power Switching, Interfacing Switching, Battery Management for Ultra Small Portable Electronics, Logic Level Shift

Technical Documents
View details on the manufacturer's website
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