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BL1308ESDW

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The BL1308ESDW from GALAXY CENTURY MICROELECTRONICS is a MOSFET with Continous Drain Current 1.4 A, Drain Source Resistance 130 to 260 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage ±12 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for BL1308ESDW can be seen below.

Product Specifications

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Product Details

  • Part Number
    BL1308ESDW
  • Manufacturer
    GALAXY CENTURY MICROELECTRONICS
  • Description
    ±12 V, 1.4 A Dual N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    1.4 A
  • Drain Source Resistance
    130 to 260 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    ±12 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    3.6 nC
  • Power Dissipation
    0.32 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Military, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363

Technical Documents
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