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BL8810-6L

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The BL8810-6L from GALAXY CENTURY MICROELECTRONICS is a MOSFET with Continous Drain Current 7 A, Drain Source Resistance 24 to 30 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage ±10 V, Gate Source Threshold Voltage 0.45 to 1 V. Tags: Surface Mount. More details for BL8810-6L can be seen below.

Product Specifications

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Product Details

  • Part Number
    BL8810-6L
  • Manufacturer
    GALAXY CENTURY MICROELECTRONICS
  • Description
    ±10 V, 7 A Dual N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    7 A
  • Drain Source Resistance
    24 to 30 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    ±10 V
  • Gate Source Threshold Voltage
    0.45 to 1 V
  • Gate Charge
    11.2 nC
  • Power Dissipation
    1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Military, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-6L

Technical Documents
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