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GBLN3304DF2

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The GBLN3304DF2 from GALAXY CENTURY MICROELECTRONICS is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 18 to 48 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage ±12 V, Gate Source Threshold Voltage 0.7 to 1.4 V. Tags: Surface Mount. More details for GBLN3304DF2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GBLN3304DF2
  • Manufacturer
    GALAXY CENTURY MICROELECTRONICS
  • Description
    ±12 V, 10 A Dual N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    18 to 48 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    ±12 V
  • Gate Source Threshold Voltage
    0.7 to 1.4 V
  • Gate Charge
    7 nC
  • Power Dissipation
    4.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Military, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN2020-6LC

Technical Documents
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