1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. GALAXY CENTURY MICROELECTRONICS
  6. GBLN6602-5DL8

GBLN6602-5DL8

Download Datasheet Request Quote

Note : Your request will be directed to GALAXY CENTURY MICROELECTRONICS.

The GBLN6602-5DL8 from GALAXY CENTURY MICROELECTRONICS is a MOSFET with Continous Drain Current 40 to 60 A, Drain Source Resistance 10 to 15 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage ±20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for GBLN6602-5DL8 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    GBLN6602-5DL8
  • Manufacturer
    GALAXY CENTURY MICROELECTRONICS
  • Description
    ±20 V, 40 to 60 A Dual N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    40 to 60 A
  • Drain Source Resistance
    10 to 15 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    ±20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    33 nC
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Military, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN5X6-8LC

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products