The GBLN6602-5DL8 from GALAXY CENTURY MICROELECTRONICS is a MOSFET with Continous Drain Current 40 to 60 A, Drain Source Resistance 10 to 15 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage ±20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for GBLN6602-5DL8 can be seen below.