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GBLN6606-S8

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The GBLN6606-S8 from GALAXY CENTURY MICROELECTRONICS is a MOSFET with Continous Drain Current 1.9 to 5.2 A, Drain Source Resistance 60 to 95 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage ±20 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Surface Mount. More details for GBLN6606-S8 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GBLN6606-S8
  • Manufacturer
    GALAXY CENTURY MICROELECTRONICS
  • Description
    ±20 V, 1.9 to 5.2 A Dual N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    1.9 to 5.2 A
  • Drain Source Resistance
    60 to 95 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    ±20 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    15 nC
  • Power Dissipation
    5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Military, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP-8

Technical Documents
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