1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. GeneSiC Semiconductor
  6. G3R160MT17D

G3R160MT17D

Download Datasheet Request Quote

Note : Your request will be directed to GeneSiC Semiconductor.

G3R160MT17D Image

The G3R160MT17D from GeneSiC Semiconductor is a MOSFET with Continous Drain Current 9 to 17 A, Drain Source Resistance 160 to 321 milliohm, Drain Source Breakdown Voltage 1700 V, Gate Source Voltage -10 to 20 V, Gate Source Threshold Voltage 1.8 to 2.7 V. Tags: Through Hole. More details for G3R160MT17D can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    G3R160MT17D
  • Manufacturer
    GeneSiC Semiconductor
  • Description
    1700 V, 9 to 17 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9 to 17 A
  • Drain Source Resistance
    160 to 321 milliohm
  • Drain Source Breakdown Voltage
    1700 V
  • Gate Source Voltage
    -10 to 20 V
  • Gate Source Threshold Voltage
    1.8 to 2.7 V
  • Gate Charge
    29 nC
  • Power Dissipation
    138 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-3
  • Applications
    Solar Inverter, EV fast charging, SMPS, UPS, Auxiliary power supply, High voltage Converters, Pulse power

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products