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G3R350MT12D

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The G3R350MT12D from GeneSiC Semiconductor is a MOSFET with Continous Drain Current 5 to 10 A, Drain Source Resistance 350 to 499 milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -10 to 20 V, Gate Source Threshold Voltage 1.8 to 2.7 V. Tags: Through Hole. More details for G3R350MT12D can be seen below.

Product Specifications

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Product Details

  • Part Number
    G3R350MT12D
  • Manufacturer
    GeneSiC Semiconductor
  • Description
    1200 V, 5 to 10 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5 to 10 A
  • Drain Source Resistance
    350 to 499 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 20 V
  • Gate Source Threshold Voltage
    1.8 to 2.7 V
  • Gate Charge
    10 nC
  • Power Dissipation
    63 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-3
  • Applications
    Solar Inverter, Moter drives, EV Charging, High Voltage, DC-DC converters, SMPS, UPS, Smart grid Transmission and distribution, Induction heating and Welding

Technical Documents
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