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G3R60MT07J

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The G3R60MT07J from GeneSiC Semiconductor is a MOSFET with Continous Drain Current 23 to 44 A, Drain Source Resistance 60 to 78 milliohm, Drain Source Breakdown Voltage 750 V, Gate Source Voltage -10 to 20 V, Gate Source Threshold Voltage 1.8 to 2.5 V. Tags: Surface Mount. More details for G3R60MT07J can be seen below.

Product Specifications

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Product Details

  • Part Number
    G3R60MT07J
  • Manufacturer
    GeneSiC Semiconductor
  • Description
    750 V, 23 to 44 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    23 to 44 A
  • Drain Source Resistance
    60 to 78 milliohm
  • Drain Source Breakdown Voltage
    750 V
  • Gate Source Voltage
    -10 to 20 V
  • Gate Source Threshold Voltage
    1.8 to 2.5 V
  • Gate Charge
    47 nC
  • Power Dissipation
    182 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263-7
  • Applications
    Solar Inverter, Moter drives, EV /HEV Charging, DC-DC converters, SMPS, UPS, Energy storage and battery chargers, Class D Amplifiers

Technical Documents
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