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3400L

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3400L Image

The 3400L from Goford Semiconductor is a MOSFET with Continous Drain Current 5.6 A, Drain Source Resistance 18 to 59 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.7 to 1.4 V. Tags: Surface Mount. More details for 3400L can be seen below.

Product Specifications

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Product Details

  • Part Number
    3400L
  • Manufacturer
    Goford Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.6 A
  • Drain Source Resistance
    18 to 59 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.7 to 1.4 V
  • Gate Charge
    9.5 nC
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3L
  • Applications
    PWM applications, Load switch, Power management

Technical Documents
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