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7N60F

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The 7N60F from Goford Semiconductor is a MOSFET with Continous Drain Current 4.2 to 7 A, Drain Source Resistance 1050 to 1300 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4.5 V. Tags: Through Hole. More details for 7N60F can be seen below.

Product Specifications

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Product Details

  • Part Number
    7N60F
  • Manufacturer
    Goford Semiconductor
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.2 to 7 A
  • Drain Source Resistance
    1050 to 1300 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4.5 V
  • Gate Charge
    29 nC
  • Power Dissipation
    47 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F

Technical Documents
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