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8N60AF

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8N60AF Image

The 8N60AF from Goford Semiconductor is a MOSFET with Continous Drain Current 5.32 to 8.5 A, Drain Source Resistance 940 to 1100 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for 8N60AF can be seen below.

Product Specifications

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Product Details

  • Part Number
    8N60AF
  • Manufacturer
    Goford Semiconductor
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.32 to 8.5 A
  • Drain Source Resistance
    940 to 1100 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    27.7 nC
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    High frequency switching mode power supply, Uninterruptible Power Supply (UPS), Electronic ballasts

Technical Documents
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