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G10N10AS

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The G10N10AS from Goford Semiconductor is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 16 to 22 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 1.6 V. Tags: Surface Mount. More details for G10N10AS can be seen below.

Product Specifications

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Product Details

  • Part Number
    G10N10AS
  • Manufacturer
    Goford Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    16 to 22 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 1.6 V
  • Gate Charge
    90 nC
  • Power Dissipation
    3.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Applications
    DC/DC Primary Side Switch, Telecom/Server, Synchronous Rectification

Technical Documents
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