The G10N10AS from Goford Semiconductor is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 16 to 22 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 1.6 V. Tags: Surface Mount. More details for G10N10AS can be seen below.