1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Goford Semiconductor
  6. G12P10TE

G12P10TE

Download Datasheet Request Quote

Note : Your request will be directed to Goford Semiconductor.

G12P10TE Image

The G12P10TE from Goford Semiconductor is a MOSFET with Continous Drain Current -12 A, Drain Source Resistance 170 to 200 milliohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Through Hole. More details for G12P10TE can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    G12P10TE
  • Manufacturer
    Goford Semiconductor
  • Description
    -100 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -12 A
  • Drain Source Resistance
    170 to 200 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    25 nC
  • Power Dissipation
    40 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Power switch, DC/DC converters

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products