The G25N02 from Goford Semiconductor is a MOSFET with Continous Drain Current 25 A, Drain Source Resistance 10.5 to 13 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.2 V. Tags: Through Hole, Surface Mount. More details for G25N02 can be seen below.