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G2K8P15S

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G2K8P15S Image

The G2K8P15S from Goford Semiconductor is a MOSFET with Continous Drain Current -2.2 A, Drain Source Resistance 277 to 310 milliohm, Drain Source Breakdown Voltage -150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3.5 to -1 V. Tags: Surface Mount. More details for G2K8P15S can be seen below.

Product Specifications

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Product Details

  • Part Number
    G2K8P15S
  • Manufacturer
    Goford Semiconductor
  • Description
    -150 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.2 A
  • Drain Source Resistance
    277 to 310 milliohm
  • Drain Source Breakdown Voltage
    -150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3.5 to -1 V
  • Gate Charge
    11 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Applications
    Power switch, DC/DC converters

Technical Documents
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