The G2K8P15S from Goford Semiconductor is a MOSFET with Continous Drain Current -2.2 A, Drain Source Resistance 277 to 310 milliohm, Drain Source Breakdown Voltage -150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3.5 to -1 V. Tags: Surface Mount. More details for G2K8P15S can be seen below.