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G2N7002E

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The G2N7002E from Goford Semiconductor is a MOSFET with Continous Drain Current 0.2 A, Drain Source Resistance 1950 to 3500 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.7 to 1.8 V. Tags: Surface Mount. More details for G2N7002E can be seen below.

Product Specifications

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Product Details

  • Part Number
    G2N7002E
  • Manufacturer
    Goford Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.2 A
  • Drain Source Resistance
    1950 to 3500 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.7 to 1.8 V
  • Gate Charge
    1.7 nC
  • Power Dissipation
    0.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Power switch, DC/DC converters

Technical Documents
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