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G34N20F

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The G34N20F from Goford Semiconductor is a MOSFET with Continous Drain Current 34 A, Drain Source Resistance 61 to 85 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for G34N20F can be seen below.

Product Specifications

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Product Details

  • Part Number
    G34N20F
  • Manufacturer
    Goford Semiconductor
  • Description
    200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    34 A
  • Drain Source Resistance
    61 to 85 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    120 nC
  • Power Dissipation
    230 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    Active power factor correction, Switching Mode Power Supply
View details on the manufacturer's website
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