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G3N50

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The G3N50 from Goford Semiconductor is a MOSFET with Continous Drain Current 3 A, Drain Source Resistance 2400 to 3000 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for G3N50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    G3N50
  • Manufacturer
    Goford Semiconductor
  • Description
    500 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3 A
  • Drain Source Resistance
    2400 to 3000 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    8.5 nC
  • Power Dissipation
    35 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-251
  • Applications
    Power switch circuit of electron ballast and adaptor
View details on the manufacturer's website
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