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G4N65J

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The G4N65J from Goford Semiconductor is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 2000 to 2400 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Through Hole. More details for G4N65J can be seen below.

Product Specifications

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Product Details

  • Part Number
    G4N65J
  • Manufacturer
    Goford Semiconductor
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    2000 to 2400 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 to 4 V
  • Gate Charge
    15 nC
  • Power Dissipation
    25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-251
  • Applications
    Switch Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS), Power Factor Correction (PFC)
View details on the manufacturer's website
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