The G5N02L from Goford Semiconductor is a MOSFET with Continous Drain Current 5 A, Drain Source Resistance 11 to 27 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for G5N02L can be seen below.